40Gb / s electro-optical intensity modulator
40Gb / s electro-optical intensity modulator Annex
The LiNbO3 electro-optic intensity modulator is based on the MZ push-pull structure with low half-wave voltage and stable physical and chemical characteristics. The device has a high response rate, widely used in a high-speed optical communication system, optical Q system, and Laser clamping, and other fields.
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40Gb / s electro-optical intensity modulator

Product description

    The LiNbO3 electro-optic intensity modulator is based on the MZ push-pull structure with low half-wave voltage and stable physical and chemical characteristics. The device has a high response rate, widely used in a high-speed optical communication system, optical Q system, and Laser clamping, and other fields.

Features

l  Low insertion loss

l  High modulation bandwidth

l  Low half wave voltage

l  Independent bias electrode

l  Complies with Telcordia GR-468-CORE requirements

Applications

l  40Gb / s high-speed transmission equipment

l  TDM and WDM 40Gb / s transmission systems

Technical indicators

Name

Center work wavelength nm

1550

Insertion loss

<5dB

Half wave voltage Vpi

RF

<7V

DC

<10V

Operating  bandwidth

>30GHz

Electrical return loss [S11]

>10dB

Light return loss

>50dB

Switch extinction ratio

>20dB

Max RF input power

28dBm

Max input optical power

20dBm

Electrical connector

Vtype

Match impedance

50 ohm

Operating temperature

10℃~60℃

Storage temperature

-40℃~85℃

Ordering information

KG

XX

XX

XX

XX

XX

Modulator type:

AM--- Strength modulator

PM--- Phase modulator

Operating wavelength:

15---1550nm

13---1310nm

10---1064nm

08---850nm

Operating bandwidth:

01—Low bandwidth

02—2.5G

10---10G

20---20G

40---40G

Input and output fiber:

PS—PM/SMF

PP---PM/PM

Connector:

FA ---FC/APC

FP ---FC/PC


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